Substitutional doping from foreign elements stands out as a preferred method for precisely tailoring the electronic band structure, conduction type, and carrier concentration of pristine materials. In ...

A South Korean research team has, for the first time, uncovered the molecular-level mechanism by which trace amounts of impurities—known as dopants—can reverse charge polarity in organic polymer ...

The feature size of silicon-based transistors is approaching the theoretical limit, which puts forward higher requirements for the “atomic level manufacturing” of semiconductors. The basic idea of ...

Semiconductor physics has been focusing on doping for a long time, and we have developed over the years the "modern theory of Doping" [Alex Zunger and Oleksandr I. Malyi, "Understanding Doping of ...

Doping in semiconductors is adding a small amount of impurities into a very pure semiconductor material. It might sound strange to add impurities on purpose, but this is a critical to make ...

Innovative co-doping strategy overcomes long-standing limits in proton conduction, opening a new way for efficient hydrogen-to-electricity conversion.