Tech Xplore on MSN
Next-generation memory: Tungsten-based SOT-MRAM achieves nanosecond switching and low-power data storage
The ability to reliably switch the direction of magnetic alignment in materials, a process known as magnetization switching, ...
Breakthroughs, discoveries, and DIY tips sent every weekday. Terms of Service and Privacy Policy. Storage and memory are both important parts of computers ...
In the era of big data and machine learning technology, performing low-power in-memory computing operations is becoming an increasingly important requisite. While much advance has been achieved in ...
The storage element in NAND flash memory is the floating gate MOSFET transistor. These devices are similar to a standard MOSFET device, other than there is an addition isolated gate. When a NAND flash ...
Digital storage and memory enable all of our consumer devices and applications, whether running on a local device or from the cloud. My next blogs will look at various digital storage products and ...
This is the second in a set of three blogs about projections for digital storage and memory for the following year that we have been doing for a while. Our first blog focused on the latest ...
The idea of combining memory and storage into one component has been around for a long time, but up until now, it was nowhere near becoming a reality. However, that might be about to change.
Join our daily and weekly newsletters for the latest updates and exclusive content on industry-leading AI coverage. Learn More Western Digital (WD) has announced a new architecture that will combine ...
TL;DR: KIOXIA has launched next-generation UFS 4.1 memory devices designed for automotive applications, featuring 8th generation BiCS FLASH 3D technology and an in-house controller. These devices ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results