San Francisco, CA. Qorvo at IMS 2016 highlighted several new products and features. The company debuted six new 50-V GaN transistors and said that its QPD1000 15-W GaN on SiC wideband input-matched ...

The first step in designing a microwave frequency power amplifier monolithic microwave integrated circuit on a given GaN foundry process is to select the transistor size and bias, writes Liam Devlin.

This audio amplifier circuit delivers up to 200 W of top-class quality for loudspeaker from 4 to 16 ohm. Operating voltage is between 24 and 36 V, max 5 A. The frequency response is from 20 to 20000 ...

This project was a sort of challenge: designing an audio amplifier capable of delivering a decent output power with a minimum parts count, without sacrificing quality. The Power Amplifier section ...

Ampleon has released the BLF989E RF power transistor, which uses the very latest ninth-generation high-voltage (50V) LDMOS process technology. The BLF989E has been designed to deliver the highly ...

Communication satellites and flying antenna platforms can contribute to the comprehensive and resilient operation of global mobile networks of the fifth and sixth generation (5G, 6G). However, as ...

While LDMOS power devices are going to low-cost plastic packages, GaAs HBTs are migrating to larger wafers to cut cost.

Someone brought a dead Marantz amplifier to [Lansing]’s attention, a rather nice model from the 1980s with one channel entirely dead and the other very quiet. His account of its repair is ...

Graphene has already brought us the world's smallest transistor – twice – and now the one atom thick form of carbon that recently won its discoverers the Nobel Prize has been used to create a ...

RF power amplifiers are going wide and high to meet wider frequency ranges and the need for more bandwidth. Many wireless electronic systems operate over wide frequency ranges and the need for more ...