Silicon Semiconductor

R&D advances for the FAMES Pilot Line

CEA-Leti has achieved a major milestone for next-generation chip stacking: fully functional 2.5 V SOI CMOS devices fabricated at 400 °C. The devices match electrical performance of devices fabricated ...
Digital Photography Review

Partially stacked sensors quietly deliver the IQ breakthrough we've been hoping for

Partially stacked sensors are essentially conventional BSI chips with more complex readout circuitry around the edge (the ...
IEEE

A 59.2–83.3 GHz CMOS LNA With 18.1 dB Gain and 5.1 dB NF Using Gate-Drain Transformer

Abstract: An E-band low-noise amplifier (LNA) is proposed for 6G applications. It employs three cascode amplifier stages, each utilizing a gate-drain transformer as the load. To extend the gain ...
IEEE

Low-Noise Amplifier Design and S-Parameter Analysis in Advanced CMOS Technologies for Modern Communication Systems

Abstract: The LNA is an integral block of RF and communication systems for amplification of low-level signals with minimum noise such that the SNR is within acceptable limits. This work presents the ...